Please use this identifier to cite or link to this item:
https://doi.org/10.1109/INEC.2013.6466080
| Title: | Characterization of a-Se p-n junction fabricated using electrolysis in NaCl aq | Authors: | Onishi, M. Komiyama, K. Takeno, K. Saito, I. Miyazaki, W. Masuzawa, T. Koh, A.T.T. Chua, D.H.C. Yamada, T. Sano, N. Okano, K. |
Keywords: | amorphous electrolysis and photoconductivity) |
Issue Date: | 2013 | Citation: | Onishi, M.,Komiyama, K.,Takeno, K.,Saito, I.,Miyazaki, W.,Masuzawa, T.,Koh, A.T.T.,Chua, D.H.C.,Yamada, T.,Sano, N.,Okano, K. (2013). Characterization of a-Se p-n junction fabricated using electrolysis in NaCl aq. Proceedings - Winter Simulation Conference : 470-472. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2013.6466080 | Abstract: | In this paper, we introduce an electro-chemical doping method of amorphous selenium (a-Se) using NaClaq. Recently, an a-Se photovoltaic device fabricated using this method [1], has been announced and opened up the potential of a new impurity doping method. This study will further explore its possibilities by doping chlorine (Cl) and sodium (Na) and aim to fabricate a p-n junction by reversing the applied voltage during the electrolysis. The device is characterized through photoelectric measurements. The I-V characteristics show rectification under light illumination. © 2013 IEEE. | Source Title: | Proceedings - Winter Simulation Conference | URI: | http://scholarbank.nus.edu.sg/handle/10635/75216 | ISBN: | 9781467348416 | ISSN: | 08917736 | DOI: | 10.1109/INEC.2013.6466080 |
| Appears in Collections: | Staff Publications |
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