Please use this identifier to cite or link to this item: https://doi.org/10.1109/INEC.2013.6466080
Title: Characterization of a-Se p-n junction fabricated using electrolysis in NaCl aq
Authors: Onishi, M.
Komiyama, K.
Takeno, K.
Saito, I.
Miyazaki, W.
Masuzawa, T.
Koh, A.T.T.
Chua, D.H.C. 
Yamada, T.
Sano, N.
Okano, K.
Keywords: amorphous
electrolysis and photoconductivity)
Issue Date: 2013
Source: Onishi, M.,Komiyama, K.,Takeno, K.,Saito, I.,Miyazaki, W.,Masuzawa, T.,Koh, A.T.T.,Chua, D.H.C.,Yamada, T.,Sano, N.,Okano, K. (2013). Characterization of a-Se p-n junction fabricated using electrolysis in NaCl aq. Proceedings - Winter Simulation Conference : 470-472. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2013.6466080
Abstract: In this paper, we introduce an electro-chemical doping method of amorphous selenium (a-Se) using NaClaq. Recently, an a-Se photovoltaic device fabricated using this method [1], has been announced and opened up the potential of a new impurity doping method. This study will further explore its possibilities by doping chlorine (Cl) and sodium (Na) and aim to fabricate a p-n junction by reversing the applied voltage during the electrolysis. The device is characterized through photoelectric measurements. The I-V characteristics show rectification under light illumination. © 2013 IEEE.
Source Title: Proceedings - Winter Simulation Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/75216
ISBN: 9781467348416
ISSN: 08917736
DOI: 10.1109/INEC.2013.6466080
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