Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/73592
Title: Mechanical behavior of Cu/low-k stacks with different barrier layers
Authors: Sekhar, V.N.
Balakumar, S.
Tay, A.A.O. 
Sinha, S.K. 
Keywords: Adhesion strength
Cu/low-k
Nanoindentation
Nanoscratch
Issue Date: 2005
Source: Sekhar, V.N.,Balakumar, S.,Tay, A.A.O.,Sinha, S.K. (2005). Mechanical behavior of Cu/low-k stacks with different barrier layers. 2005 Proceedings - 22nd International VLSI Multilevel Interconnection Conference, VMIC 2005 : 257-265. ScholarBank@NUS Repository.
Abstract: We report the nanomechanical characterization of Cu/BD/Si and BD/Si stacks with Ta and TaN barrier layers, which are of interest in BEOL (Back end of the line) technology. The hardness, elastic modulus and adhesion strength of Cu/Ta/BD/Si, Cu/TaN/BD/Si, Ta/BD/Si and TaN/BD/Si stacks were measured using nanoindentation and nanoscratch techniques respectively. The Cu/TaN/BD/Si stack with higher modulus and hardness shows higher adhesion strength when compared to Cu/Ta/BD/Si stack. There is no significant difference in hardness, elastic modulus and adhesion strength observed in case of Ta/BD/Si and TaN/BD/Si stacks. Scanning electron microscopy (SEM) investigations of scratch profile on stacks reveal that the Cu/Ta/BD/Si stack shows severe damage than Cu/TaN/BD/Si stack. It is observed that the BD/Si stacks with barriers show brittle scratch failure as irregular cracks and chipping at the sides of the scratch length.
Source Title: 2005 Proceedings - 22nd International VLSI Multilevel Interconnection Conference, VMIC 2005
URI: http://scholarbank.nus.edu.sg/handle/10635/73592
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