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Title: Fabrication and parametric study of wafer-level multiple-copper-column interconnect
Authors: Liao, E.B.
Ang, S.S.
Tay, A.A.O. 
Feng, H.H.
Nagarajan, R.
Kripesh, V.
Issue Date: 2004
Citation: Liao, E.B.,Ang, S.S.,Tay, A.A.O.,Feng, H.H.,Nagarajan, R.,Kripesh, V. (2004). Fabrication and parametric study of wafer-level multiple-copper-column interconnect. Proceedings - Electronic Components and Technology Conference 2 : 1251-1255. ScholarBank@NUS Repository.
Abstract: Electronic packaging technology lags behind the rapidly developing semiconductor technology, and as a result the package has become the limiting factor for microsystem performance. A critical aspect of package performance is the reliability of chip-to-next-level interconnects. This paper presents some initial fabrication and simulation results of a compliant interconnect scheme, which features multiple copper columns in a single interconnect and is expected to demonstrate high thermomechanical reliability as predicted by a simplified model. Prototype interconnects with pitch of 40 μm have been realized based on wafer-level processes such as photolithography and electrolytic plating. Simulation tools such as Ansys and Ansoft's Q3D are employed to compare mechanical and electrical performance of multi-copper-column (MCC) and single-copper-column (SCC) interconnect that has been available in the market. Parametric studies are implemented to investigate the geometric effects of MCC interconnects on their performances.
Source Title: Proceedings - Electronic Components and Technology Conference
ISSN: 05695503
Appears in Collections:Staff Publications

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