Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72949
Title: Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique
Authors: Guan, Hao
Cho, Byung Jin 
Li, M.F. 
He, Y.D. 
Xu, Zhen
Dong, Zhong
Issue Date: 1999
Source: Guan, Hao,Cho, Byung Jin,Li, M.F.,He, Y.D.,Xu, Zhen,Dong, Zhong (1999). Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 81-84. ScholarBank@NUS Repository.
Abstract: The quasi-breakdown (QB) mechanism of ultra-thin gate oxide (35 angstroms) under high field stress was investigated using DCIV technique. It was found that under various stress conditions, the charge to QB is exponentially dependent on the stressing gate voltage, while the interface state densities always reach to the same value at the onset point of QB. Thus, we conclude that quasi-breakdown in ultra-thin oxide is triggered by a critical density of interface states.
Source Title: Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/72949
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