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https://scholarbank.nus.edu.sg/handle/10635/72913
Title: | Series resistance and effective channel mobility degradation in LDD NMOSFETs under hot-carrier stressing | Authors: | Oh, G.G. Chim, W.K. Chan, D.S.H. Lou, C.L. |
Issue Date: | 1999 | Citation: | Oh, G.G.,Chim, W.K.,Chan, D.S.H.,Lou, C.L. (1999). Series resistance and effective channel mobility degradation in LDD NMOSFETs under hot-carrier stressing. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 99-103. ScholarBank@NUS Repository. | Abstract: | With the ability to independently extract the series drain resistance and effective channel mobility from a single MOSFET device, the individual effect of these two parameters on the hot-carrier degradation in graded-drain nMOSFETs was separated and investigated. A self-limiting behaviour due to trapped charge and interface state generation was observed. A three-stage degradation model was proposed to explain the observed hot-carrier degradation behaviour. | Source Title: | Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | URI: | http://scholarbank.nus.edu.sg/handle/10635/72913 |
Appears in Collections: | Staff Publications |
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