Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72913
Title: Series resistance and effective channel mobility degradation in LDD NMOSFETs under hot-carrier stressing
Authors: Oh, G.G.
Chim, W.K. 
Chan, D.S.H. 
Lou, C.L.
Issue Date: 1999
Source: Oh, G.G.,Chim, W.K.,Chan, D.S.H.,Lou, C.L. (1999). Series resistance and effective channel mobility degradation in LDD NMOSFETs under hot-carrier stressing. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 99-103. ScholarBank@NUS Repository.
Abstract: With the ability to independently extract the series drain resistance and effective channel mobility from a single MOSFET device, the individual effect of these two parameters on the hot-carrier degradation in graded-drain nMOSFETs was separated and investigated. A self-limiting behaviour due to trapped charge and interface state generation was observed. A three-stage degradation model was proposed to explain the observed hot-carrier degradation behaviour.
Source Title: Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/72913
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