Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72868
Title: Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique
Authors: Guan, Hao
Li, M.F. 
Zhang, Yaohui 
Cho, B.J. 
Jie, B.B.
Xie, Joseph
Wang, J.L.F. 
Yen, Andrew C. 
Sheng, George T.T.
Dong, Zhong
Li, Weidan
Issue Date: 1999
Source: Guan, Hao,Li, M.F.,Zhang, Yaohui,Cho, B.J.,Jie, B.B.,Xie, Joseph,Wang, J.L.F.,Yen, Andrew C.,Sheng, George T.T.,Dong, Zhong,Li, Weidan (1999). Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique. International Integrated Reliability Workshop Final Report : 20-23. ScholarBank@NUS Repository.
Abstract: The direct-current current-voltage (DCIV) method is presented to be an effective monitor for predicting plasma charging damage in ultra thin gate oxides. The DCIV experiments in deep submicron p-MOSFETs with 50 angstroms and 37 angstroms oxide and with various metal antenna structures clearly indicate plasma damage region on the wafers. High initial interface trap density, rapid latent degradation and low charge to soft breakdown were found at serious plasma damage region.
Source Title: International Integrated Reliability Workshop Final Report
URI: http://scholarbank.nus.edu.sg/handle/10635/72868
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