Please use this identifier to cite or link to this item:
|Title:||Performance analysis of MOS-controlled bipolar power devices|
Liang, Yung C.
|Source:||Tan, Pearl,Liang, Yung C. (1995). Performance analysis of MOS-controlled bipolar power devices. Proceedings of the International Conference on Power Electronics and Drive Systems 1 : 87-92. ScholarBank@NUS Repository.|
|Abstract:||MOS-controlled bipolar power devices combine MOS and bipolar technology into monolithic structure to tap the best features from both classes of devices. The bipolar part renders high conduction current capabilities at low forward voltage while the MOSFET component makes it possible to implement voltage control with minimum gate drive requirements. In this paper, three types of MOS-controlled bipolar devices, namely the Insulated-Gate Bipolar Transistor (IGBT), the Emitter-Switched Thyristor (EST) and the N-channel MOS-controlled Thyristor (NMCT), are analysed. Certain features unique to each device are highlighted. By keeping their internal parameters as similar as possible, a comparison of their performances is also made.|
|Source Title:||Proceedings of the International Conference on Power Electronics and Drive Systems|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 9, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.