Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72788
Title: New low-voltage contrast mechanism to image local defects in very thin silicon dioxide films. True oxide electron beam induced current
Authors: Lau, W.S. 
Chan, D.S.H. 
Phang, J.C.H. 
Chow, K.W.
Pey, K.S.
Lim, Y.P.
Cronquist, B.
Issue Date: 1993
Source: Lau, W.S.,Chan, D.S.H.,Phang, J.C.H.,Chow, K.W.,Pey, K.S.,Lim, Y.P.,Cronquist, B. (1993). New low-voltage contrast mechanism to image local defects in very thin silicon dioxide films. True oxide electron beam induced current. Annual Proceedings - Reliability Physics (Symposium) : 190-198. ScholarBank@NUS Repository.
Abstract: A new low-voltage contrast mechanism due to electron hole pairs generated in the oxide by an electron beam was observed at electric fields lower than 3.5 MV/cm. This is in addition to the TCM contrast mechanism observed at electric fields higher than 3.5 MV/cm. The new contrast mechanism is opposite in sign to the TCM contrast mechanism such that the image of a local thinning defect in the oxide is dark at low bias voltage and bright at higher bias voltage. Good contrast can be obtained at electric field as low as 2.4 MV/cm. Potential applications include large area imaging of oxide defects and quantitative mapping of oxide thickness.
Source Title: Annual Proceedings - Reliability Physics (Symposium)
URI: http://scholarbank.nus.edu.sg/handle/10635/72788
ISBN: 0780307828
ISSN: 00999512
Appears in Collections:Staff Publications

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