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https://scholarbank.nus.edu.sg/handle/10635/72642
| Title: | Folded gate LDMOS with low on-resistance and high transconductance | Authors: | Xu, S. Zhu, Y. Foo, P.-D. Liang, Y.C. Sin, J.K.O. |
Issue Date: | 2000 | Citation: | Xu, S.,Zhu, Y.,Foo, P.-D.,Liang, Y.C.,Sin, J.K.O. (2000). Folded gate LDMOS with low on-resistance and high transconductance. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) : 55-56. ScholarBank@NUS Repository. | Abstract: | In this paper, a novel LDMOSFET is proposed with low on-resistance and high transconductance. The silicon substrate surface is trenched by using an extra mask, resulting in a folded gate structure. The channel density is doubled in the experiment. With the Folded Gate LDMOS (FG-gate LDMOS) concept, the on-resistance was reduced by 40%, while the transconductance was improved by 80%. The significance of the folded gate concept will be available for CMOS and other MOS-gated devices. | Source Title: | IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) | URI: | http://scholarbank.nus.edu.sg/handle/10635/72642 |
| Appears in Collections: | Staff Publications |
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