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|Title:||Effect of surface conditions on the measurement of minority carrier diffusion lengths using the surface photovoltage technique|
|Keywords:||Laser-microwave photoconductance decay|
Minority carrier diffusion length
|Citation:||Zhang, Z., Tan, L.S., Koh, S.M., Liu, H.M., Flottmann, D. (2000). Effect of surface conditions on the measurement of minority carrier diffusion lengths using the surface photovoltage technique. Proceedings of SPIE - The International Society for Optical Engineering 4227 : 66-71. ScholarBank@NUS Repository. https://doi.org/10.1117/12.405371|
|Abstract:||The surface photovoltage (SPV) technique is a well-established method for the measurement of the minority carrier diffusion lengths (L) in semiconductor wafers. The measurement can be performed with two methods: constant magnitude SPV (Method A); and linear photovoltage, constant photon flux mode (Method B). A detailed theoretical study published several years ago showed that Method A was more robust and than Method B. In this paper, the values of L on a set of silicon wafers with various surface treatments were measured using both Methods A and B, and the results compared with those obtained using the laser-microwave photoconductance decay (LMPCD) method. It was found that for wafers without any surface treatment, the results from SPV Method A were much closer to those obtained with LMPCD, than those from Method B. The values of L obtained from Method A were also much less sensitive to the surface conditions of the wafers, thus indicating that they are closer to the true bulk diffusion lengths of the wafers. Method B can give correct values of L only under the condition of a very low surface recombination velocity.|
|Source Title:||Proceedings of SPIE - The International Society for Optical Engineering|
|Appears in Collections:||Staff Publications|
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