Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.405371
Title: Effect of surface conditions on the measurement of minority carrier diffusion lengths using the surface photovoltage technique
Authors: Zhang, Z.
Tan, L.S. 
Koh, S.M.
Liu, H.M.
Flottmann, D.
Keywords: Laser-microwave photoconductance decay
Minority carrier diffusion length
Surface photovoltage
Issue Date: 2000
Source: Zhang, Z., Tan, L.S., Koh, S.M., Liu, H.M., Flottmann, D. (2000). Effect of surface conditions on the measurement of minority carrier diffusion lengths using the surface photovoltage technique. Proceedings of SPIE - The International Society for Optical Engineering 4227 : 66-71. ScholarBank@NUS Repository. https://doi.org/10.1117/12.405371
Abstract: The surface photovoltage (SPV) technique is a well-established method for the measurement of the minority carrier diffusion lengths (L) in semiconductor wafers. The measurement can be performed with two methods: constant magnitude SPV (Method A); and linear photovoltage, constant photon flux mode (Method B). A detailed theoretical study published several years ago showed that Method A was more robust and than Method B. In this paper, the values of L on a set of silicon wafers with various surface treatments were measured using both Methods A and B, and the results compared with those obtained using the laser-microwave photoconductance decay (LMPCD) method. It was found that for wafers without any surface treatment, the results from SPV Method A were much closer to those obtained with LMPCD, than those from Method B. The values of L obtained from Method A were also much less sensitive to the surface conditions of the wafers, thus indicating that they are closer to the true bulk diffusion lengths of the wafers. Method B can give correct values of L only under the condition of a very low surface recombination velocity.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/72597
ISSN: 0277786X
DOI: 10.1117/12.405371
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