Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72525
Title: Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitors
Authors: Ooi, J.A.
Ling, C.H. 
Issue Date: 1997
Source: Ooi, J.A.,Ling, C.H. (1997). Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitors. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 19-22. ScholarBank@NUS Repository.
Abstract: Results of Fowler-Nordheim current stress are compared for tungsten polycided and non-polycided gate MOS capacitors. Tungsten silicidation is shown to greatly improve the immunity of the MOS gate oxide to Fowler-Nordheim stress-induced charge generation and trapping. The silicidation process appears to have hardened the oxide to new trap creation.
Source Title: IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
URI: http://scholarbank.nus.edu.sg/handle/10635/72525
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