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|Title:||Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitors|
|Source:||Ooi, J.A.,Ling, C.H. (1997). Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitors. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 19-22. ScholarBank@NUS Repository.|
|Abstract:||Results of Fowler-Nordheim current stress are compared for tungsten polycided and non-polycided gate MOS capacitors. Tungsten silicidation is shown to greatly improve the immunity of the MOS gate oxide to Fowler-Nordheim stress-induced charge generation and trapping. The silicidation process appears to have hardened the oxide to new trap creation.|
|Source Title:||IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE|
|Appears in Collections:||Staff Publications|
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