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https://scholarbank.nus.edu.sg/handle/10635/72525
| Title: | Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitors | Authors: | Ooi, J.A. Ling, C.H. |
Issue Date: | 1997 | Citation: | Ooi, J.A.,Ling, C.H. (1997). Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitors. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 19-22. ScholarBank@NUS Repository. | Abstract: | Results of Fowler-Nordheim current stress are compared for tungsten polycided and non-polycided gate MOS capacitors. Tungsten silicidation is shown to greatly improve the immunity of the MOS gate oxide to Fowler-Nordheim stress-induced charge generation and trapping. The silicidation process appears to have hardened the oxide to new trap creation. | Source Title: | IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE | URI: | http://scholarbank.nus.edu.sg/handle/10635/72525 |
| Appears in Collections: | Staff Publications |
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