Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/72517
Title: Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structures
Authors: Yue, J.M.P.
Chim, W.K. 
Cho, B.J. 
Chan, D.S.H. 
Qin, W.H.
Kim, Y.B.
Jang, S.A.
Yeo, I.S.
Issue Date: 1999
Source: Yue, J.M.P.,Chim, W.K.,Cho, B.J.,Chan, D.S.H.,Qin, W.H.,Kim, Y.B.,Jang, S.A.,Yeo, I.S. (1999). Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structures. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 94-98. ScholarBank@NUS Repository.
Abstract: Narrow-channel nMOSFETs with recessed LOCOS (R-LOCOS) isolation structure exhibits less hot-carrier-induced degradation than wide-channel nMOSFETs, but the degradation mechanism of both devices is the same. This new finding is explained by the fact that in deep submicrometer MOSFETs with ultra-thin gate oxides and a relatively thin field oxide, the dominant factor deciding the degradation behaviour in narrow channel and wide channel devices is the vertical electric field effect rather than the mechanical stress effect.
Source Title: Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/72517
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