Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structures
Yue, J.M.P. Chim, W.K. Cho, B.J. Chan, D.S.H. Qin, W.H. Kim, Y.B. Jang, S.A. Yeo, I.S.
Yue, J.M.P.
Qin, W.H.
Kim, Y.B.
Jang, S.A.
Yeo, I.S.
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Abstract
Narrow-channel nMOSFETs with recessed LOCOS (R-LOCOS) isolation structure exhibits less hot-carrier-induced degradation than wide-channel nMOSFETs, but the degradation mechanism of both devices is the same. This new finding is explained by the fact that in deep submicrometer MOSFETs with ultra-thin gate oxides and a relatively thin field oxide, the dominant factor deciding the degradation behaviour in narrow channel and wide channel devices is the vertical electric field effect rather than the mechanical stress effect.
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Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
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Date
1999
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Type
Conference Paper