Please use this identifier to cite or link to this item:
|Title:||Vacuum based wafer level encapsulation (WLE) of MEMS using physical vapor deposition (PVD)|
|Source:||Soon, B.W.,Singh, N.,Tsai, J.M.,Lee, C. (2012). Vacuum based wafer level encapsulation (WLE) of MEMS using physical vapor deposition (PVD). Proceedings of the 2012 IEEE 14th Electronics Packaging Technology Conference, EPTC 2012 : 342-345. ScholarBank@NUS Repository. https://doi.org/10.1109/EPTC.2012.6507104|
|Abstract:||In this paper, we demonstrate wafer level encapsulation of MEMS using physical vapor deposition of aluminum (Al). A cavity area, which simulates the area of a MEMS device, is fully encapsulated by dual layer of amorphous silicon and Al. The encapsulation process takes place in the PVD chamber, thus the vacuum level in the sealed cavity is assumed to be high. The proposed processes are entirely CMOS compatible and readily deployed into any standard CMOS foundry and semiconductor wafer fabrication. © 2012 IEEE.|
|Source Title:||Proceedings of the 2012 IEEE 14th Electronics Packaging Technology Conference, EPTC 2012|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.