Using probing techniques to identify and study high leakage issues in the development of 90nm process and below

Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPFA.2006.250997

Title:	Using probing techniques to identify and study high leakage issues in the development of 90nm process and below
Authors:	Hendarto, E. Mai, Z. Tan, P.K. Lek, A. Lau, B. Lam, J. Chim, W.K.
Issue Date:	2006
Citation:	Hendarto, E.,Mai, Z.,Tan, P.K.,Lek, A.,Lau, B.,Lam, J.,Chim, W.K. (2006). Using probing techniques to identify and study high leakage issues in the development of 90nm process and below. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 58-62. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2006.250997
Abstract:	The combined use of scanning probe microscope based techniques, namely conductive atomic force microscopy (C-AFM) and tunneling atomic force microscopy (TUNA), and nanoprobing technique is presented. In 90nm process and below, C-AFM identifies leakage by current mapping, while TUNA measures the current-voltage (I-V) curves of different contacts to study the integrity of individual contacts. Nanoprobing is used to obtain and compare the I- V characteristics of good and leaky transistors. © 2006 IEEE.
Source Title:	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI:	http://scholarbank.nus.edu.sg/handle/10635/72139
ISBN:	1424402069
DOI:	10.1109/IPFA.2006.250997
Appears in Collections:	Staff Publications

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