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|Title:||Transmission EELS attachment for SEM|
|Authors:||Khursheed, A. |
|Source:||Khursheed, A.,Luo, T. (2005). Transmission EELS attachment for SEM. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 298-301. ScholarBank@NUS Repository.|
|Abstract:||At present transmission electron energy loss spectrum (EELS) analysis is only carried out in transmission electron microscopes, such as Transmission Electron Microscopes (TEMs) or Scanning Transmission Electron Microscopes (STEMs). Although elemental analysis can be done in Scanning Electron Microscopes (SEMs) with EDX, its energy resolution is typically limited between 100-150eV, nearly two orders of magnitude larger than the energy resolution of EELS in TEMs/STEMs. This paper presents an EELS attachment for conventiaonal SEMs. K edge and EELS low loss spectrum of a thin amorphous carbon film are obtained in a Philips XL30 field emission SEM. The EELS attachment has the capability of acquiring structural information and 4 eV energy resolution at 30keV primary beam energy. © 2005 IEEE.|
|Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA|
|Appears in Collections:||Staff Publications|
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