Please use this identifier to cite or link to this item: https://doi.org/10.1109/EDAPS.2008.4736027
Title: Thermal-aware electrical analysis of high-speed interconnect
Authors: Liu, E.-X.
Li, E.-P. 
Wei, X.
Issue Date: 2008
Citation: Liu, E.-X., Li, E.-P., Wei, X. (2008). Thermal-aware electrical analysis of high-speed interconnect. 2008 Electrical Design of Advanced Packaging and Systems Symposium, IEEE EDAPS 2008 - Proceedings : 171-174. ScholarBank@NUS Repository. https://doi.org/10.1109/EDAPS.2008.4736027
Abstract: This paper studied the problem of coupled electrical and thermal modeling, specifically for the signal integrity analysis of on-chip interconnect due to the influence of substrate and interconnect temperature. The approach presented in this paper is using finite-difference method (FDM) to solve for the temperature profile of the substrate. The information of the substrate temperature is used for subsequent thermal modeling of the interconnect. The ID thermal modeling of the interconnect is done by using an equivalent thermal circuit model, which is compatible with the SPICE simulator and can fast produce the temperature profile of the interconnect. Numerical examples are presented, which show that the temperature of the interconnect affects the electrical performance of the interconnect. © 2008 IEEE.
Source Title: 2008 Electrical Design of Advanced Packaging and Systems Symposium, IEEE EDAPS 2008 - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/72015
ISBN: 9781424426331
DOI: 10.1109/EDAPS.2008.4736027
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