Thermal effect simulation of GaN HFETs under CW and pulsed operation

Please use this identifier to cite or link to this item: https://doi.org/10.1093/ietele/e90-c.1.204

Title:	Thermal effect simulation of GaN HFETs under CW and pulsed operation
Authors:	Xu, J. Yin, W.-Y. Mao, J. Li, L.-W.
Keywords:	CW GaN heterojunction field-effect transistors (HFETs) Maximum temperature PW Thermal simulation
Issue Date:	Jan-2007
Citation:	Xu, J., Yin, W.-Y., Mao, J., Li, L.-W. (2007-01). Thermal effect simulation of GaN HFETs under CW and pulsed operation. IEICE Transactions on Electronics E90-C (1) : 204-207. ScholarBank@NUS Repository. https://doi.org/10.1093/ietele/e90-c.1.204
Abstract:	In this paper, the thermal characteristic of the GaN HFETs has been analyzed using the hybrid finite element method (FEM). Both the steady and transient state thermal operations are quantitatively studied with the effects of temperature-dependent thermal conductivities of GaN and the substrate materials properly treated. The temperature distribution and the maximum temperatures of the HFETs operated under excitations of continuous-waves (CW) and pulsed-waves (PW) including double exponential shape PW such as electromagnetic pulse (EMP) and ultra-wideband (UWB) signal are studied and compared. Copyright © 2007 The Institute of Electronics, Information and Communication Engineers.
Source Title:	IEICE Transactions on Electronics
URI:	http://scholarbank.nus.edu.sg/handle/10635/72012
ISSN:	09168524
DOI:	10.1093/ietele/e90-c.1.204
Appears in Collections:	Staff Publications

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