Please use this identifier to cite or link to this item: https://doi.org/10.1109/EMAP.2008.4784256
Title: The role ofni buffer layer between insn solder and eu metallization for hermetic wafer bonding
Authors: Yu, D.
Lee, C. 
Lau, J.H.
Issue Date: 2008
Citation: Yu, D., Lee, C., Lau, J.H. (2008). The role ofni buffer layer between insn solder and eu metallization for hermetic wafer bonding. 2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008 : 171-174. ScholarBank@NUS Repository. https://doi.org/10.1109/EMAP.2008.4784256
Abstract: In order to achieve low temperature hermetic sealing for MEMS and IC packaging, wafer-wafer bonding using In/Sn and Cu metallization system was investigated. We found that in order to get high bonding yield, a thin buffer layer between solder and Cu metallization is necessary except suitable bonding parameters. In this paper, diffusion phenomena between solders and metallization were studied, the conception of buffer layer for wafer eutectic wafer bonding was introduced, the effect of Ni thickness on the bonding and hermetic properties were reported. © 2008 IEEE.
Source Title: 2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008
URI: http://scholarbank.nus.edu.sg/handle/10635/71996
ISBN: 9781424436217
DOI: 10.1109/EMAP.2008.4784256
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