Please use this identifier to cite or link to this item:
|Title:||Switching model of taox-based nonpolar resistive random access memory|
|Citation:||Tong, X., Wu, W., Liu, Z., Tran, X.A., Yu, H.Y., Yeo, Y.-C. (2013-04). Switching model of taox-based nonpolar resistive random access memory. Japanese Journal of Applied Physics 52 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.7567/JJAP.52.04CD03|
|Abstract:||We report on a novel TaOx-based nonpolar resistive random access memory (RRAM) cell design with a Cr/TaOx /Al (top-to-bottom) structure. Extensive studies of the switching mechanism of the nonpolar RRAM were performed. The thermal coefficient of resistance of the RRAM in the low-resistance state is observed to adopt different polarities depending on how the preceding set operation was performed. On the basis of this observation, the coexistence of metallic ions and oxygen vacancies in the dominant filament is deduced, and a hybrid filament hypothesis is proposed for the first time to explain the observations. A switching model is provided to explain the microscopic changes in the nonpolar TaOx-based RRAM. © 2013 The Japan Society of Applied Physics.|
|Source Title:||Japanese Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 11, 2019
WEB OF SCIENCETM
checked on Jan 1, 2019
checked on Dec 8, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.