Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2008.4796810
Title: Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport
Authors: Zhao, H.
Rustagi, S.C.
Singh, N.
Ma, F.-J. 
Samudra, G.S. 
Budhaaraju, K.D.
Manhas, S.K.
Tung, C.H.
Lo, G.Q.
Baccarani, G.
Kwong, D.L.
Issue Date: 2008
Source: Zhao, H.,Rustagi, S.C.,Singh, N.,Ma, F.-J.,Samudra, G.S.,Budhaaraju, K.D.,Manhas, S.K.,Tung, C.H.,Lo, G.Q.,Baccarani, G.,Kwong, D.L. (2008). Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2008.4796810
Abstract: In this work the charge-based capacitance measurement (CBCM) method has been extended and calibrated to measure sub-fF level bias-dependent capacitance of single channel silicon nanowire (SNW) transistors. Mixed mode simulations are used to establish the efficacy of the method. Test keys have been carefully designed and fabricated on-chip so that C-V and I-V characteristics are measured on the same single finger SNW device. To our knowledge, this is the first work to report systematic extraction of the mobility of channel carriers from a single channel SNW device at room temperature.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/71895
ISBN: 9781424423781
ISSN: 01631918
DOI: 10.1109/IEDM.2008.4796810
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

2
checked on Feb 12, 2018

Page view(s)

36
checked on Feb 16, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.