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|Title:||Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport|
|Citation:||Zhao, H.,Rustagi, S.C.,Singh, N.,Ma, F.-J.,Samudra, G.S.,Budhaaraju, K.D.,Manhas, S.K.,Tung, C.H.,Lo, G.Q.,Baccarani, G.,Kwong, D.L. (2008). Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2008.4796810|
|Abstract:||In this work the charge-based capacitance measurement (CBCM) method has been extended and calibrated to measure sub-fF level bias-dependent capacitance of single channel silicon nanowire (SNW) transistors. Mixed mode simulations are used to establish the efficacy of the method. Test keys have been carefully designed and fabricated on-chip so that C-V and I-V characteristics are measured on the same single finger SNW device. To our knowledge, this is the first work to report systematic extraction of the mobility of channel carriers from a single channel SNW device at room temperature.|
|Source Title:||Technical Digest - International Electron Devices Meeting, IEDM|
|Appears in Collections:||Staff Publications|
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