Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISTDM.2012.6222470
Title: Strain engineering of ultra-thin silicon-on-insulator structures using ion implant
Authors: Ding, Y.
Cheng, R. 
Zhou, Q. 
Du, A.
Daval, N.
Nguyen, B.-Y.
Yeo, Y.-C. 
Issue Date: 2012
Citation: Ding, Y.,Cheng, R.,Zhou, Q.,Du, A.,Daval, N.,Nguyen, B.-Y.,Yeo, Y.-C. (2012). Strain engineering of ultra-thin silicon-on-insulator structures using ion implant. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings : 86-87. ScholarBank@NUS Repository. https://doi.org/10.1109/ISTDM.2012.6222470
Abstract: We report a novel way of introducing strain in Ultra-Thin Body and Buried-Oxide (UTBB) SOI structures by Ge implant into the underlying Si substrate and the formation of localized SiGe regions underneath the buried oxide (BOX) by solid-phase epitaxy (SPE). The localized SiGe regions result in local deformation of the ultra-thin Si. Compressive strain of up to -0.55% and -1.2% were detected by Nano-Beam Diffraction (NBD) at the center and edge of an ultra-thin Si region with 50 nm width between two local SiGe regions. © 2012 IEEE.
Source Title: 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/71873
ISBN: 9781457718625
DOI: 10.1109/ISTDM.2012.6222470
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