Strain engineering of ultra-thin silicon-on-insulator structures using ion implant

Abstract

We report a novel way of introducing strain in Ultra-Thin Body and Buried-Oxide (UTBB) SOI structures by Ge implant into the underlying Si substrate and the formation of localized SiGe regions underneath the buried oxide (BOX) by solid-phase epitaxy (SPE). The localized SiGe regions result in local deformation of the ultra-thin Si. Compressive strain of up to -0.55% and -1.2% were detected by Nano-Beam Diffraction (NBD) at the center and edge of an ultra-thin Si region with 50 nm width between two local SiGe regions. © 2012 IEEE.