Please use this identifier to cite or link to this item:
|Title:||Spin-bias driven field effect transistor|
|Authors:||Ma, M.J. |
|Citation:||Ma, M.J., Jalil, M.B.A., Siu, Z.B. (2012-04-01). Spin-bias driven field effect transistor. Journal of Applied Physics 111 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3690463|
|Abstract:||We propose a spin field effect transistor driven by spin biases which are externally generated in the source and drain electrodes. We employed the Keldysh non-equilibrium Green's function formalism to evaluate the charge and spin currents through the transistor, and verify the operation of the transistor as predicted by a semiclassical model. Our calculations show that in the off state, both the charge and spin currents are suppressed. In the on state, the device allows only the spin current to pass through but not charge current, thus potentially improving the energy efficiency of the device. © 2012 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 14, 2019
WEB OF SCIENCETM
checked on Jan 7, 2019
checked on Dec 29, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.