Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISDRS.2007.4422419
Title: Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET
Authors: Wong, H.-S.
Ang, K.-W.
Chan, L.
Hoe, K.-M.
Tung, C.-H.
Balasubramaniam, N.
Weeks, D.
Landin, T.
Spear, J.
Thomas, S.G.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2007
Source: Wong, H.-S.,Ang, K.-W.,Chan, L.,Hoe, K.-M.,Tung, C.-H.,Balasubramaniam, N.,Weeks, D.,Landin, T.,Spear, J.,Thomas, S.G.,Samudra, G.,Yeo, Y.-C. (2007). Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET. 2007 International Semiconductor Device Research Symposium, ISDRS : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2007.4422419
Source Title: 2007 International Semiconductor Device Research Symposium, ISDRS
URI: http://scholarbank.nus.edu.sg/handle/10635/71821
ISBN: 1424418917
DOI: 10.1109/ISDRS.2007.4422419
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