Please use this identifier to cite or link to this item:
https://doi.org/10.1109/ISDRS.2007.4422419
| Title: | Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET | Authors: | Wong, H.-S. Ang, K.-W. Chan, L. Hoe, K.-M. Tung, C.-H. Balasubramaniam, N. Weeks, D. Landin, T. Spear, J. Thomas, S.G. Samudra, G. Yeo, Y.-C. |
Issue Date: | 2007 | Citation: | Wong, H.-S.,Ang, K.-W.,Chan, L.,Hoe, K.-M.,Tung, C.-H.,Balasubramaniam, N.,Weeks, D.,Landin, T.,Spear, J.,Thomas, S.G.,Samudra, G.,Yeo, Y.-C. (2007). Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET. 2007 International Semiconductor Device Research Symposium, ISDRS : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2007.4422419 | Source Title: | 2007 International Semiconductor Device Research Symposium, ISDRS | URI: | http://scholarbank.nus.edu.sg/handle/10635/71821 | ISBN: | 1424418917 | DOI: | 10.1109/ISDRS.2007.4422419 |
| Appears in Collections: | Staff Publications |
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