Please use this identifier to cite or link to this item: https://doi.org/10.1109/IECON.2006.347490
Title: Slanted oxide-bypassed superjunction power MOSFETs
Authors: Chen, Y.
Liang, Y.C. 
Samudra, G.S. 
Issue Date: 2006
Source: Chen, Y.,Liang, Y.C.,Samudra, G.S. (2006). Slanted oxide-bypassed superjunction power MOSFETs. IECON Proceedings (Industrial Electronics Conference) : 2746-2750. ScholarBank@NUS Repository. https://doi.org/10.1109/IECON.2006.347490
Abstract: The superjunction power MOSFET devices, such as p-n column superjunction (named SJ) devices and oxide bypassed (OB) devices, are highly recognized for their higher blocking capability and lower on-state resistance. However, the performance of SJ devices is greatly handicapped due to difficulties in the formation of perfect charge-balanced SJ p-n columns by the current process technology, especially when the SJ drift region width is smaller than 1 μn. OB devices shift the emphasis from the difficulty in achieving a precise doping match to the easily achievable control in the oxide thickness. However, it is hard to obtain a breakdown voltage comparable to the SJ devices due to the non-uniform electric field in the OB drift region. In this paper, a novel structure for power MOSFETs, called the Slanted OB structure (SOB) is proposed. The SOB device can outperform other superjunction devices in the low to medium voltage range, such as devices below 120V with the drift region width smaller or equal to 1 μm. Combining the advantages of simple fabrication process, high breakdown voltage and low specific on state resistance, the SOB device promises to be an alternative to other superjunction devices for the low to medium voltage applications. © 2006 IEEE.
Source Title: IECON Proceedings (Industrial Electronics Conference)
URI: http://scholarbank.nus.edu.sg/handle/10635/71793
ISBN: 1424401364
DOI: 10.1109/IECON.2006.347490
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

5
checked on Feb 12, 2018

Page view(s)

12
checked on Feb 16, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.