Silicides as new electrode/heater for compact integration of phase change memory with CMOS

Please use this identifier to cite or link to this item: https://doi.org/10.1109/VTSA.2010.5488913

Title:	Silicides as new electrode/heater for compact integration of phase change memory with CMOS
Authors:	Fang, L.W.-W. Zhao, R. Yeo, E.-G. Lim, K.-G. Yang, H. Shi, L. Chong, T.-C. Yeo, Y.-C.
Issue Date:	2010
Citation:	Fang, L.W.-W.,Zhao, R.,Yeo, E.-G.,Lim, K.-G.,Yang, H.,Shi, L.,Chong, T.-C.,Yeo, Y.-C. (2010). Silicides as new electrode/heater for compact integration of phase change memory with CMOS. Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 : 138-139. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2010.5488913
Abstract:	We report the first demonstration of phase change memory cells utilizing nickel monosilicide (NiSi) or platinum monosilicide (PtSi) as the bottom electrode or heater material. This work enables the integration of PCRAM directly on the silicided drain regions of MOSFETs, allowing compact integration with reduced process complexity and cost. Low reset current of 0.8 mA was achieved for contact dimensions of ∼ 1 μm. Electrical and simulation results demonstrate the feasibility of employing silicides as a bottom electrode/heater in a PCRAM. © 2010 IEEE.
Source Title:	Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
URI:	http://scholarbank.nus.edu.sg/handle/10635/71769
ISBN:	9781424450633
DOI:	10.1109/VTSA.2010.5488913
Appears in Collections:	Staff Publications

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