Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/71642
Title: RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation
Authors: Chin, A.
Chan, K.T.
Huang, C.H.
Chen, C.
Liang, V.
Chen, J.K.
Chien, S.C.
Sun, S.W.
Duh, D.S.
Lin, W.J.
Zhu, C. 
Li, M.F. 
McAlister, S.P.
Kwong, D.-L.
Issue Date: 2003
Source: Chin, A.,Chan, K.T.,Huang, C.H.,Chen, C.,Liang, V.,Chen, J.K.,Chien, S.C.,Sun, S.W.,Duh, D.S.,Lin, W.J.,Zhu, C.,Li, M.F.,McAlister, S.P.,Kwong, D.-L. (2003). RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation. Technical Digest - International Electron Devices Meeting : 375-378. ScholarBank@NUS Repository.
Abstract: High quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100 GHz is close to that for ideal devices designed by EM simulation for lossless substrates.
Source Title: Technical Digest - International Electron Devices Meeting
URI: http://scholarbank.nus.edu.sg/handle/10635/71642
ISSN: 01631918
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

17
checked on Dec 9, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.