Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/71606
Title: Reliability characterization of organic ultra low k film using ramp voltage breakdown
Authors: Krishnamoorthy, A.
Murthy, B.R.
Yiang, K.Y.
Yoo, W.J. 
Issue Date: 2003
Source: Krishnamoorthy, A.,Murthy, B.R.,Yiang, K.Y.,Yoo, W.J. (2003). Reliability characterization of organic ultra low k film using ramp voltage breakdown. Proceedings - Electrochemical Society 10 : 232-236. ScholarBank@NUS Repository.
Abstract: This paper deals with the leakage and dielectric breakdown of an organic nanoporous ultra low k (ULK) film when it is exposed to different plasma conditions. The ULK film was exposed to different plasma conditions before depositing hardmask for further integration. This was to simulate sidewall damage caused by plasma etch processes. Blanket ULK wafers were also subjected to same plasma treatments and MS type capacitors were fabricated. Voltage ramp results of integrated and MIS structures on blanket films were compared. Subjecting ULK to different oxidizing and reducing plasma conditions resulted in high leakage and low dielectric breakdown strength indicating that the dielectric reliability is significantly decided by weakest ULK/hardmask interface. Use of hardmask during integration prevents ULK surface plasma damage, but the damage to trench sidewalls cannot be prevented. However, sidewall damage did not contribute to dielectric leakage as is exemplified by the promising results from untreated wafers that show low leakage until breakdown.
Source Title: Proceedings - Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/71606
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

14
checked on Dec 16, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.