Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.711509
Title: Real-time spatial control of photoresist development rate
Authors: Tay, A. 
Ho, W.-K. 
Hu, N.
Kiew, C.-M.
Tsai, K.-Y.
Keywords: Lithography
Photoresist development
Real-time control
Temperature control
Issue Date: 2007
Source: Tay, A., Ho, W.-K., Hu, N., Kiew, C.-M., Tsai, K.-Y. (2007). Real-time spatial control of photoresist development rate. Proceedings of SPIE - The International Society for Optical Engineering 6518 (PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.711509
Abstract: Critical dimension (CD) is one the most critical variable in the lithography process with the most direct impact on the device speed and performance of integrated circuit. The development rate can have an impact on the CD uniformity from wafer-to-wafer and within-wafer. Conventional approaches to controlling this process include monitoring the end-point of the develop process and adjusting the development time or concentration from wafer-to-wafer or run-to-run. This paper presents an innovative approach to control the development rate in real-time by monitoring the photoresist thickness. Our approach uses an array of spectrometers positioned above a programmable bakeplate to monitor the resist thickness. The develop process and post-development bake process is integrated into one equipment. The resist thickness can be extracted from the spectrometers data using standard optimization algorithms. With these in-situ measurements, the temperature profile of the bakeplate is controlled in real-time by manipulating the heater power distribution using a control algorithm. We have experimentally obtained a repeatable improvement in controlling the end-point of the develop process from wafer-to-wafer and within wafer.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/71571
ISBN: 0819466379
ISSN: 0277786X
DOI: 10.1117/12.711509
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