Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISSM.2006.4493108
Title: Real-time monitoring of photoresist thickness contour in microlithography
Authors: Ho, W.K. 
Chen, X.
Wu, X.
Tay, A. 
Issue Date: 2006
Source: Ho, W.K.,Chen, X.,Wu, X.,Tay, A. (2006). Real-time monitoring of photoresist thickness contour in microlithography. IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings : 364-367. ScholarBank@NUS Repository. https://doi.org/10.1109/ISSM.2006.4493108
Abstract: In microelectronics processing, coating of photoresist is a common process. It is important to ensure the uniformity of the photoresist thickness across the wafer. In this paper, we propose an insitu monitoring system. In the setup, a spectrometer is used to measure the photoresist thickness contour on the wafer after the spin-coat step or edge-bead removal step. The experimental results are compared with off-line ellipsometer measurements. The worst-case error is experimentally found to be less than 2%.
Source Title: IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/71568
ISBN: 9784990413804
ISSN: 1523553X
DOI: 10.1109/ISSM.2006.4493108
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