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Abstract
A new type of crystal seed, polycrystalline Ge (poly-Ge) formed by Co induced crystallization was used in the rapid-melting-growth (RMG) of Ge. With the poly-Ge seed, the grain size of Ge films obtained was significantly larger than the one using single crystal epitaxial Si as crystal seed and the one without any crystal seed. High quality (almost single crystal) Ge was obtained on 1 mm x 1 mm square structure and single crystal Ge was obtained on 5 μm wide Ge wires by the RMG method with Co-induced poly-Ge as the crystal seed. ©2010 IEEE.
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Source Title
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
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Series/Report No.
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Date
2010
DOI
10.1109/ICSICT.2010.5667453
Type
Conference Paper