Rapid-melting-growth of Ge on insulator using cobalt (Co) induced-crystallized Ge as the seed for lateral growth

Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2010.5667453

Title:	Rapid-melting-growth of Ge on insulator using cobalt (Co) induced-crystallized Ge as the seed for lateral growth
Authors:	Phung, T.H. Chen, M. Kang, H.J. Zhang, C. Yu, M. Zhu, C.
Issue Date:	2010
Citation:	Phung, T.H.,Chen, M.,Kang, H.J.,Zhang, C.,Yu, M.,Zhu, C. (2010). Rapid-melting-growth of Ge on insulator using cobalt (Co) induced-crystallized Ge as the seed for lateral growth. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 1578-1580. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2010.5667453
Abstract:	A new type of crystal seed, polycrystalline Ge (poly-Ge) formed by Co induced crystallization was used in the rapid-melting-growth (RMG) of Ge. With the poly-Ge seed, the grain size of Ge films obtained was significantly larger than the one using single crystal epitaxial Si as crystal seed and the one without any crystal seed. High quality (almost single crystal) Ge was obtained on 1 mm x 1 mm square structure and single crystal Ge was obtained on 5 μm wide Ge wires by the RMG method with Co-induced poly-Ge as the crystal seed. ©2010 IEEE.
Source Title:	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
URI:	http://scholarbank.nus.edu.sg/handle/10635/71548
ISBN:	9781424457984
DOI:	10.1109/ICSICT.2010.5667453
Appears in Collections:	Staff Publications

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