Please use this identifier to cite or link to this item: https://doi.org/10.1142/S0219581X10006922
Title: Pulsed laser annealing of ultra-shallow junctions in silicon-germanium
Authors: Tan, L.S. 
Tan, J.Y.
Begum, A.
Hong, M.H. 
Du, A.Y.
Bhat, M.
Wang, X.C.
Keywords: end-of-range defects
Pulsed laser annealing
ultra-shallow junction
Issue Date: Aug-2010
Source: Tan, L.S.,Tan, J.Y.,Begum, A.,Hong, M.H.,Du, A.Y.,Bhat, M.,Wang, X.C. (2010-08). Pulsed laser annealing of ultra-shallow junctions in silicon-germanium. International Journal of Nanoscience 9 (4) : 341-344. ScholarBank@NUS Repository. https://doi.org/10.1142/S0219581X10006922
Abstract: The effect of laser energy fluence and substrate heating on the annealing of boron-implanted silicongermanium epitaxial layers on silicon was investigated. By making use of the difference in the melting points of silicongermanium and silicon, a process window in the laser energy fluence can be found such that the meltdepth was confined within the silicongermanium. Pre-heating of the substrate to 300°C was done to reduce the laser fluence required and improve the surface morphology. Cross-sectional transmission electron microscopy showed that there were no end-of-range defects due to ion implantation at the silicongermanium/silicon interface after the laser annealing. © 2010 World Scientific Publishing Company.
Source Title: International Journal of Nanoscience
URI: http://scholarbank.nus.edu.sg/handle/10635/71526
ISSN: 0219581X
DOI: 10.1142/S0219581X10006922
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