P-type doping in GaN through Be implantation

Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssc.200461458

Title:	P-type doping in GaN through Be implantation
Authors:	Feng, Z.C. Sun, Y.J. Tan, L.S. Chua, S.J. Yu, J.W. Yang, C.C. Lu, W. Collins, W.E.
Issue Date:	2005
Citation:	Feng, Z.C., Sun, Y.J., Tan, L.S., Chua, S.J., Yu, J.W., Yang, C.C., Lu, W., Collins, W.E. (2005). P-type doping in GaN through Be implantation. Physica Status Solidi C: Conferences 2 (7) : 2415-2419. ScholarBank@NUS Repository. https://doi.org/10.1002/pssc.200461458
Abstract:	P-type doping through Be implantation in GaN is achieved by a two-step annealing process. Combined photoluminescence-Raman measurements showed Be-related band, indicating a low acceptor ionization energy of 140 meV, and resonance Raman features. X-ray diffraction revealed the lattice expansion due to Be-implantation. Scanning electron microscopy exhibited the surface defects morphology with hexagonal plane like inverse open pyramids. The effect of new annealing process on Be activation is discussed. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title:	Physica Status Solidi C: Conferences
URI:	http://scholarbank.nus.edu.sg/handle/10635/71525
ISSN:	16101634
DOI:	10.1002/pssc.200461458
Appears in Collections:	Staff Publications

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