Please use this identifier to cite or link to this item: https://doi.org/10.1109/IECON.2007.4460230
Title: Progression of superjunction power MOSFET devices
Authors: Chen, Y.
Liang, Y.C. 
Samudra, G.S. 
Feng, H.
Issue Date: 2007
Source: Chen, Y.,Liang, Y.C.,Samudra, G.S.,Feng, H. (2007). Progression of superjunction power MOSFET devices. IECON Proceedings (Industrial Electronics Conference) : 1380-1385. ScholarBank@NUS Repository. https://doi.org/10.1109/IECON.2007.4460230
Abstract: The p-n column superjunction (SJ) MOSFET power devices are highly recognized for their higher blocking capability and lower specific on-state resistance. However, in practice, the performance of SJ devices is handicapped with difficulties in formation of perfect charge-balanced p-n columns due to the limitation of current process technology, especially for devices with small widths and low voltage rating. Novel structures of Polysilicon Flanked Superjunction (PF-SJ) and Oxide-bypassed (OB), Graded OB, Slanted OB Superjunction MOSFETs were previously proposed to overcome the SJ fabrication limitation. In this paper, the progression of superjunction power MOSFET device development is discussed with the new approaches on lateral structures demonstrated for future high power integrated circuit applications. ©2007 IEEE.
Source Title: IECON Proceedings (Industrial Electronics Conference)
URI: http://scholarbank.nus.edu.sg/handle/10635/71513
ISBN: 1424407834
DOI: 10.1109/IECON.2007.4460230
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