Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.3532938
Title: Path to achieve sub-10-nm half-pitch using electron beam lithography
Authors: Tavakkoli, A.K.G.
Piramanayagam, S.N.
Ranjbar, M.
Sbiaa, R.
Chong, T.C. 
Issue Date: Jan-2011
Source: Tavakkoli, A.K.G., Piramanayagam, S.N., Ranjbar, M., Sbiaa, R., Chong, T.C. (2011-01). Path to achieve sub-10-nm half-pitch using electron beam lithography. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 (1) : 0110351-0110357. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3532938
Abstract: Achieving dense patterns with good resolution is a key step for several applications in micro- and nanoelectronics. Based on the mechanical strength and capillary forces between nanometer scale features, the authors have proposed that the use of thin resist is a solution to achieve dense array of patterns. Therefore, the authors have studied the effect of resist thickness on the resolution of dense patterns for both lines and dots. Based on the experimental results using hydrogen silsesquioxane resist, dense patterns with sub-10-nm half-pitch were achieved. The authors also propose a new method for calculating contrast for nanostructures. © 2011 American Vacuum Society.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/71379
ISSN: 10711023
DOI: 10.1116/1.3532938
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