Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMAG.2004.829271
Title: Optimization of nano-oxide layer in CIP spin valves
Authors: Qiu, J.
Luo, P.
Li, K.
Zheng, Y.
An, L.H.
Wu, Y. 
Keywords: Interlayer coupling, magnetoresistance (MR)
Nano-oxide layer (NOL)
Spin valve (SV)
Issue Date: Jul-2004
Source: Qiu, J., Luo, P., Li, K., Zheng, Y., An, L.H., Wu, Y. (2004-07). Optimization of nano-oxide layer in CIP spin valves. IEEE Transactions on Magnetics 40 (4 II) : 2260-2262. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2004.829271
Abstract: The influence of nano-oxide layer (NOL) on interlayer coupling (Hin) and magnetoresistance (MR) of bottom spin-valves (SV) were studied by inserting NOL at four positions: 1) before the Cu spacer; 2) in the middle of the Cu spacer; 3) after the Cu spacer; and 4) after the Cu cap layer. The NOL smoothens the surface of the interface at position 1), 3), and 4), except for 2). Surface flatten by NOL is associated with CoFeOx. Ten percent of MR enhancement can be achieved with NOL at the position 3) and 4). Weak antiferromagnetic interlayer coupling was observed with NOL at position 3). A 27.2% MR ratio has been reached in dual spin valve with two NOLs in two pinned layers.
Source Title: IEEE Transactions on Magnetics
URI: http://scholarbank.nus.edu.sg/handle/10635/71317
ISSN: 00189464
DOI: 10.1109/TMAG.2004.829271
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