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https://scholarbank.nus.edu.sg/handle/10635/71059
Title: | Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization | Authors: | Cho, B.J. Poon, D. Tan, L.S. Bhat, M. See, A. |
Issue Date: | 2004 | Citation: | Cho, B.J.,Poon, D.,Tan, L.S.,Bhat, M.,See, A. (2004). Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization. Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 4 : 22-26. ScholarBank@NUS Repository. | Abstract: | Advantages of multiple-pulse Laser Thermal Annealing (LTA) with a moderate energy fluence on preamorphized silicon are described. Re-distribution of laser annealed boron junction during subsequent RTA is also studied. A method to optimize the multiple-pulse LTA condition is proposed. It is also demonstrated that Hall analysis can be used as a quick evaluation tool of the integrity of the junctions. | Source Title: | Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 | URI: | http://scholarbank.nus.edu.sg/handle/10635/71059 | ISBN: | 7309039157 |
Appears in Collections: | Staff Publications |
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