Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/71059
Title: Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization
Authors: Cho, B.J. 
Poon, D.
Tan, L.S. 
Bhat, M.
See, A.
Issue Date: 2004
Source: Cho, B.J.,Poon, D.,Tan, L.S.,Bhat, M.,See, A. (2004). Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization. Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 4 : 22-26. ScholarBank@NUS Repository.
Abstract: Advantages of multiple-pulse Laser Thermal Annealing (LTA) with a moderate energy fluence on preamorphized silicon are described. Re-distribution of laser annealed boron junction during subsequent RTA is also studied. A method to optimize the multiple-pulse LTA condition is proposed. It is also demonstrated that Hall analysis can be used as a quick evaluation tool of the integrity of the junctions.
Source Title: Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
URI: http://scholarbank.nus.edu.sg/handle/10635/71059
ISBN: 7309039157
Appears in Collections:Staff Publications

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