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|Title:||Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization|
|Authors:||Cho, B.J. |
|Citation:||Cho, B.J.,Poon, D.,Tan, L.S.,Bhat, M.,See, A. (2004). Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization. Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 4 : 22-26. ScholarBank@NUS Repository.|
|Abstract:||Advantages of multiple-pulse Laser Thermal Annealing (LTA) with a moderate energy fluence on preamorphized silicon are described. Re-distribution of laser annealed boron junction during subsequent RTA is also studied. A method to optimize the multiple-pulse LTA condition is proposed. It is also demonstrated that Hall analysis can be used as a quick evaluation tool of the integrity of the junctions.|
|Source Title:||Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004|
|Appears in Collections:||Staff Publications|
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