Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/71046
Title: Multilevel magnetoresistive random access memory written at curie point
Authors: Zheng, Y.K.
Wu, Y.H. 
Qiu, J.J.
Guo, Z.B.
Han, G.C.
Li, K.B.
Lu, Z.Q.
Xie, H.
Luo, P.
Issue Date: 2002
Source: Zheng, Y.K.,Wu, Y.H.,Qiu, J.J.,Guo, Z.B.,Han, G.C.,Li, K.B.,Lu, Z.Q.,Xie, H.,Luo, P. (2002). Multilevel magnetoresistive random access memory written at curie point. Digests of the Intermag Conference : BB02-. ScholarBank@NUS Repository.
Abstract: A multilevel magnetoresistive random access memory (MRAM) was proposed that writes data at Curie point and reads data using the angular-dependent magnetoresistance. A hard magnetic layer or pinned ferromagnetic layer was used as the recording layer. The free layer was served as the read layer and the magnetization was set to the initial state.
Source Title: Digests of the Intermag Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/71046
ISSN: 00746843
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

35
checked on Dec 9, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.