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Title: Multilevel magnetoresistive random access memory written at curie point
Authors: Zheng, Y.K.
Wu, Y.H. 
Qiu, J.J.
Guo, Z.B.
Han, G.C.
Li, K.B.
Lu, Z.Q.
Xie, H.
Luo, P.
Issue Date: 2002
Source: Zheng, Y.K.,Wu, Y.H.,Qiu, J.J.,Guo, Z.B.,Han, G.C.,Li, K.B.,Lu, Z.Q.,Xie, H.,Luo, P. (2002). Multilevel magnetoresistive random access memory written at curie point. Digests of the Intermag Conference : BB02-. ScholarBank@NUS Repository.
Abstract: A multilevel magnetoresistive random access memory (MRAM) was proposed that writes data at Curie point and reads data using the angular-dependent magnetoresistance. A hard magnetic layer or pinned ferromagnetic layer was used as the recording layer. The free layer was served as the read layer and the magnetization was set to the initial state.
Source Title: Digests of the Intermag Conference
ISSN: 00746843
Appears in Collections:Staff Publications

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