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|Title:||Metrology solutions using optical scatterometry for advanced CMOS: III-V and Germanium multi-gate field-effect transistors|
Optical critical dimension
|Citation:||Chin, H.-C., Liu, B., Zhang, X., Ling, M.-L., Yip, C.-H., Liu, Y., Hu, J., Yeo, Y.-C. (2013). Metrology solutions using optical scatterometry for advanced CMOS: III-V and Germanium multi-gate field-effect transistors. Proceedings of SPIE - The International Society for Optical Engineering 8788 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.2020248|
|Abstract:||In this work, we report metrology solutions using scatterometry Optical Critical Dimension (OCD) characterization on two advanced CMOS devices: novel n-channel gate-last In0.53Ga0.47As FinFET with self-aligned Molybdenum (Mo) contacts and p-channel Ge FinFET formed on Germanium-on-Insulator (GOI) substrate. Key critical process steps during the fabrication of these advanced transistors were identified for process monitor using scatterometry OCD measurement to improve final yield. Excellent correlation with reference metrology and high measurement precision were achieved by using OCD characterization, confirming scatterometry OCD as a promising metrology technique for next generation device applications. In addition, we also further explore OCD characterization using normal incidence spectroscopic reflectometry (SR), oblique incidence spectroscopic ellipsometry (SE), and combined SR+SE technologies. The combined SR+SE approach was found to provide better precision. © 2013 SPIE.|
|Source Title:||Proceedings of SPIE - The International Society for Optical Engineering|
|Appears in Collections:||Staff Publications|
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