Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.2013413
Title: Metrology solutions for high performance germanium multi-gate field-effect transistors using optical scatterometry
Authors: Chin, H.-C.
Ling, M.-L.
Liu, B.
Zhang, X.
Li, J.
Liu, Y.
Hu, J.
Yeo, Y.-C. 
Keywords: Ellipsometry
FinFET
Germanium
OCD
Optical critical dimension
Scatterometry
Issue Date: 2013
Source: Chin, H.-C., Ling, M.-L., Liu, B., Zhang, X., Li, J., Liu, Y., Hu, J., Yeo, Y.-C. (2013). Metrology solutions for high performance germanium multi-gate field-effect transistors using optical scatterometry. Proceedings of SPIE - The International Society for Optical Engineering 8681 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.2013413
Abstract: In this work, we report the first demonstration of scatterometry Optical Critical Dimension (OCD) characterization on advanced Ge Multi-Gate Field-Effect Transistor (MuGFET) or FinFET formed on a Germanium-on- Insulator (GeOI) substrate. Two critical process steps in the Ge MuGFET process flow were investigated, i.e. after Ge Fin formation, and after TaN gate stack etching process. All ey process variations in the test structures were successfully monitored by the floating or fitting parameters in the OCD models. In addition, excellent static repeatability, with 3σ lower than 0.12 nm, was also achieved. The measurement results from OCD were also compared with both Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) measurements. Excellent correlation with both SEM and TEM was achieved by employing OCD characterization, confirming scatterometry OCD as a promising metrology technique for next generation multi-gate transistor with an advanced channel material. © 2013 SPIE.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/70922
ISBN: 9780819494634
ISSN: 0277786X
DOI: 10.1117/12.2013413
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