Please use this identifier to cite or link to this item:
|Title:||Metrology solutions for high performance germanium multi-gate field-effect transistors using optical scatterometry|
Optical critical dimension
|Citation:||Chin, H.-C., Ling, M.-L., Liu, B., Zhang, X., Li, J., Liu, Y., Hu, J., Yeo, Y.-C. (2013). Metrology solutions for high performance germanium multi-gate field-effect transistors using optical scatterometry. Proceedings of SPIE - The International Society for Optical Engineering 8681 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.2013413|
|Abstract:||In this work, we report the first demonstration of scatterometry Optical Critical Dimension (OCD) characterization on advanced Ge Multi-Gate Field-Effect Transistor (MuGFET) or FinFET formed on a Germanium-on- Insulator (GeOI) substrate. Two critical process steps in the Ge MuGFET process flow were investigated, i.e. after Ge Fin formation, and after TaN gate stack etching process. All ey process variations in the test structures were successfully monitored by the floating or fitting parameters in the OCD models. In addition, excellent static repeatability, with 3σ lower than 0.12 nm, was also achieved. The measurement results from OCD were also compared with both Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) measurements. Excellent correlation with both SEM and TEM was achieved by employing OCD characterization, confirming scatterometry OCD as a promising metrology technique for next generation multi-gate transistor with an advanced channel material. © 2013 SPIE.|
|Source Title:||Proceedings of SPIE - The International Society for Optical Engineering|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 12, 2018
WEB OF SCIENCETM
checked on Oct 17, 2018
checked on Nov 9, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.