Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/70694
Title: Investigation on the thermal distribution of nMOSFETs under different operation modes by scanning thermal microscopy
Authors: Hendarto, E.
Altes, A.
Heiderhoff, R.
Phang, J.C.H. 
Balk, L.J.
Issue Date: 2005
Source: Hendarto, E.,Altes, A.,Heiderhoff, R.,Phang, J.C.H.,Balk, L.J. (2005). Investigation on the thermal distribution of nMOSFETs under different operation modes by scanning thermal microscopy. IEEE International Reliability Physics Symposium Proceedings : 294-299. ScholarBank@NUS Repository.
Abstract: A Wollaston resistive probe based scanning thermal microscope (SThM) is used to investigate the thermal distribution within the gate channel of an wMOSFET with width to length ratio (W/L) of 2.0μm/3.0μm. The dynamic mode of SThM is used to detect and characterize thermal wave propagation in nMOSFET biased at different operation modes, i.e. linear, near saturation, far saturation, and near breakdown. An ultra compliant polyimide thermal probe is later employed and the resulting 2D thermal distribution is compared with the results obtained using the Wollaston resistive probe. Measurements using the two probes reveal that the highest thermal wave amplitude region in the gate is closest to the drain at pinch-off, and slowly spreads out and extends towards the source as the MOSFET approaches the near breakdown operation mode. © 2005 IEEE.
Source Title: IEEE International Reliability Physics Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/70694
ISBN: 0780388038
ISSN: 15417026
Appears in Collections:Staff Publications

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