Please use this identifier to cite or link to this item: https://doi.org/10.1109/INDIN.2006.275769
Title: In-situ monitoring of photoresist thickness contour
Authors: Ho, W.K. 
Wu, X.
Tay, A. 
Chen, X.
Issue Date: 2007
Source: Ho, W.K.,Wu, X.,Tay, A.,Chen, X. (2007). In-situ monitoring of photoresist thickness contour. 2006 IEEE International Conference on Industrial Informatics, INDIN'06 : 1091-1095. ScholarBank@NUS Repository. https://doi.org/10.1109/INDIN.2006.275769
Abstract: In microelectronics processing, coating of photoresist is a common process. It is important to ensure the uniformity of the photoresist thickness across the wafer. In this paper, we propose an in-situ monitoring system. In the setup, a spectrometer is used to measure the photoresist thickness contour on the wafer after the spin-coat step or edge-bead removal step. The experimental results are compared with off-line ellipsometer measurements. The worst-case error is experimentally found to be less than 2%. © 2006 IEEE.
Source Title: 2006 IEEE International Conference on Industrial Informatics, INDIN'06
URI: http://scholarbank.nus.edu.sg/handle/10635/70611
ISBN: 0780397010
DOI: 10.1109/INDIN.2006.275769
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