Impact of metal dummy fills on the performance of CMOS inductors

Please use this identifier to cite or link to this item: https://doi.org/10.1109/EDSSC.2007.4450109

Title:	Impact of metal dummy fills on the performance of CMOS inductors
Authors:	Nan, L. Mouthaan, K. Xiong, Y.-Z. Shi, J. Rustagi, S.C. Ooi, B.-L.
Issue Date:	2007
Citation:	Nan, L.,Mouthaan, K.,Xiong, Y.-Z.,Shi, J.,Rustagi, S.C.,Ooi, B.-L. (2007). Impact of metal dummy fills on the performance of CMOS inductors. IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 : 251-254. ScholarBank@NUS Repository. https://doi.org/10.1109/EDSSC.2007.4450109
Abstract:	To meet the metal density and uniformity requirement, metal dummy fills are inserted on all metallization layers in modern CMOS technologies. These metal dummy fills can have a detrimental effect on the performance of IC components. In this paper, the impact of metal dummy fills on the equivalent circuit and the performance of on-chip spiral inductors is presented based on experimental data. A simple closed-form formula is further provided to account for the effect of metal dummy fills to update the model for inductors in the conventional environment without metal dummy fills. © 2007 IEEE.
Source Title:	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
URI:	http://scholarbank.nus.edu.sg/handle/10635/70536
ISBN:	1424406374
DOI:	10.1109/EDSSC.2007.4450109
Appears in Collections:	Staff Publications

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