Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSIT.2010.5556240
Title: III-V MOSFETs with a new self-aligned contact
Authors: Zhang, X.
Guo, H.
Ko, C.-H.
Wann, C.H.
Cheng, C.-C.
Lin, H.-Y.
Chin, H.-C.
Gong, X.
Lim, P.S.Y.
Luo, G.-L.
Chang, C.-Y.
Chien, C.-H.
Han, Z.-Y.
Huang, S.-C.
Yeo., Y.-C. 
Issue Date: 2010
Source: Zhang, X.,Guo, H.,Ko, C.-H.,Wann, C.H.,Cheng, C.-C.,Lin, H.-Y.,Chin, H.-C.,Gong, X.,Lim, P.S.Y.,Luo, G.-L.,Chang, C.-Y.,Chien, C.-H.,Han, Z.-Y.,Huang, S.-C.,Yeo., Y.-C. (2010). III-V MOSFETs with a new self-aligned contact. Digest of Technical Papers - Symposium on VLSI Technology : 233-234. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2010.5556240
Abstract: We report the first demonstration of III-V n-MOSFETs with self-aligned contact technology. The self-aligned contact was formed using a salicide-like process which is compatible with CMOS process flow. A new epitaxy process was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. Nickel was deposited and annealed to form NiGeSi, and unreacted metal was removed. A second anneal diffuses Ge and Si into GaAs to form heavily n+ doped regions, and a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. MOSFETs with the new self-aligned metallization process were realized. © 2010 IEEE.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/70519
ISBN: 9781424476374
ISSN: 07431562
DOI: 10.1109/VLSIT.2010.5556240
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