Please use this identifier to cite or link to this item:
https://doi.org/10.1109/VLSIT.2010.5556240
| Title: | III-V MOSFETs with a new self-aligned contact | Authors: | Zhang, X. Guo, H. Ko, C.-H. Wann, C.H. Cheng, C.-C. Lin, H.-Y. Chin, H.-C. Gong, X. Lim, P.S.Y. Luo, G.-L. Chang, C.-Y. Chien, C.-H. Han, Z.-Y. Huang, S.-C. Yeo., Y.-C. |
Issue Date: | 2010 | Citation: | Zhang, X.,Guo, H.,Ko, C.-H.,Wann, C.H.,Cheng, C.-C.,Lin, H.-Y.,Chin, H.-C.,Gong, X.,Lim, P.S.Y.,Luo, G.-L.,Chang, C.-Y.,Chien, C.-H.,Han, Z.-Y.,Huang, S.-C.,Yeo., Y.-C. (2010). III-V MOSFETs with a new self-aligned contact. Digest of Technical Papers - Symposium on VLSI Technology : 233-234. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2010.5556240 | Abstract: | We report the first demonstration of III-V n-MOSFETs with self-aligned contact technology. The self-aligned contact was formed using a salicide-like process which is compatible with CMOS process flow. A new epitaxy process was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. Nickel was deposited and annealed to form NiGeSi, and unreacted metal was removed. A second anneal diffuses Ge and Si into GaAs to form heavily n+ doped regions, and a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. MOSFETs with the new self-aligned metallization process were realized. © 2010 IEEE. | Source Title: | Digest of Technical Papers - Symposium on VLSI Technology | URI: | http://scholarbank.nus.edu.sg/handle/10635/70519 | ISBN: | 9781424476374 | ISSN: | 07431562 | DOI: | 10.1109/VLSIT.2010.5556240 |
| Appears in Collections: | Staff Publications |
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