Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2727410
Title: Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate
Authors: Yu, H.P.
Pey, K.L.
Choi, W.K. 
Antoniadis, D.A.
Fitzgerald, E.A.
Dawood, M.K.
Ow, K.Q.
Chi, D.Z.
Issue Date: 2007
Source: Yu, H.P.,Pey, K.L.,Choi, W.K.,Antoniadis, D.A.,Fitzgerald, E.A.,Dawood, M.K.,Ow, K.Q.,Chi, D.Z. (2007). Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate. ECS Transactions 6 (1) : 271-277. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2727410
Abstract: In this work, the tuning of the nickel fully germanided metal gate workfunction via a Y/Ge/Ni gate stack structure was demonstrated. By varying the yttrium interlayer thickness from 0 to 9.6nm, a full range of workfunction tuning from 5.11eV to 3.8eV can be achieved. We showed that the chemical potential of the material adjacent to the gate electrode/gate insulator plays an important role in the determination of the workfunction. The gate stack is thermally stable up to 500°C annealing. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/70390
ISBN: 9781566775502
ISSN: 19385862
DOI: 10.1149/1.2727410
Appears in Collections:Staff Publications

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