Please use this identifier to cite or link to this item: https://doi.org/10.1109/RFIC.2007.380889
Title: Experimental characterization of the effect of metal dummy fills on spiral inductors
Authors: Nan, L.
Mouthaan, K. 
Xiong, Y.-Z.
Shi, J.
Rustagi, S.C.
Ooi, B.-L. 
Keywords: Chemical-mechanical polishing process (CMP)
CMOS technology
Metal dummy fills
Microwave measurements
Spiral inductors
Issue Date: 2007
Source: Nan, L., Mouthaan, K., Xiong, Y.-Z., Shi, J., Rustagi, S.C., Ooi, B.-L. (2007). Experimental characterization of the effect of metal dummy fills on spiral inductors. Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium : 307-310. ScholarBank@NUS Repository. https://doi.org/10.1109/RFIC.2007.380889
Abstract: In modern CMOS technologies, metal dummy fills are required to maintain metal density uniformity and to planarize the layers. As frequency increases, the effect of the metal dummy fills on the CMOS integrated circuits or components should be taken into account. This work presents experimental results of the effect of metal dummy fills on the microwave behavior of spiral inductors fabricated in a standard 0.18-μm CMOS technology. The influences on the equivalent model parameters and the Q-factor are characterized based on measured S-parameters of inductors with and without metal dummy fills. © 2007 IEEE.
Source Title: Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
URI: http://scholarbank.nus.edu.sg/handle/10635/70242
ISBN: 1424405319
ISSN: 15292517
DOI: 10.1109/RFIC.2007.380889
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