Please use this identifier to cite or link to this item: https://doi.org/10.1002/sia.3851
Title: Effects of electric field in band alignment measurements using photoelectron spectroscopy
Authors: Chiam, S.Y.
Liu, Z.Q.
Pan, J.S.
Manippady, K.K.
Wong, L.M.
Chim, W.K. 
Keywords: band offsets
extra-atomic relaxation
field effects
UPS
work function
XPS
Issue Date: Aug-2012
Source: Chiam, S.Y., Liu, Z.Q., Pan, J.S., Manippady, K.K., Wong, L.M., Chim, W.K. (2012-08). Effects of electric field in band alignment measurements using photoelectron spectroscopy. Surface and Interface Analysis 44 (8) : 1091-1095. ScholarBank@NUS Repository. https://doi.org/10.1002/sia.3851
Abstract: Band alignment of most heterojunctions can be accurately measured by photoelectron spectroscopy. However, care must be taken in the measurement and analysis of the data to accurately account for any spurious effects. In this work, we focus on the effects of electric field in both core-levels and work function measurements. We measured experimentally the relaxation energies of remote screening and examine the resultant potential drop. We will then introduce a model to show the extent of errors that are possible in core-level measurements with this potential difference across the thin film. This model can be effectively used to model any field effects like differential charging or band bending in heterojunction measurements. Both the experimental and simulation results showed that film thickness of greater than 4 nm are relatively free of remote screening effects from the substrate. Finally, we will show that measuring the low kinetic energy electrons requires a more negative applied bias over that necessary to overcome the spectrometer work function. Copyright © 2011 John Wiley & Sons, Ltd.
Source Title: Surface and Interface Analysis
URI: http://scholarbank.nus.edu.sg/handle/10635/70096
ISSN: 01422421
DOI: 10.1002/sia.3851
Appears in Collections:Staff Publications

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