Please use this identifier to cite or link to this item:
https://doi.org/10.1109/IPFA.2006.251018
| Title: | Effects of annealing and temperature on SGOI fabrication using Ge condensation | Authors: | Balakumar, S. Ong, C.S. Tung, C.H. Trigg, A. Li, M.F. Kumar, R. Lo, G.Q. Balasubramanian, N. Yeo, Y.C. Kwong, D.L. |
Issue Date: | 2006 | Citation: | Balakumar, S.,Ong, C.S.,Tung, C.H.,Trigg, A.,Li, M.F.,Kumar, R.,Lo, G.Q.,Balasubramanian, N.,Yeo, Y.C.,Kwong, D.L. (2006). Effects of annealing and temperature on SGOI fabrication using Ge condensation. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 150-153. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2006.251018 | Source Title: | Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | URI: | http://scholarbank.nus.edu.sg/handle/10635/70093 | ISBN: | 1424402069 | DOI: | 10.1109/IPFA.2006.251018 |
| Appears in Collections: | Staff Publications |
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