Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPFA.2006.251018
Title: Effects of annealing and temperature on SGOI fabrication using Ge condensation
Authors: Balakumar, S.
Ong, C.S.
Tung, C.H.
Trigg, A.
Li, M.F.
Kumar, R.
Lo, G.Q.
Balasubramanian, N.
Yeo, Y.C. 
Kwong, D.L.
Issue Date: 2006
Citation: Balakumar, S.,Ong, C.S.,Tung, C.H.,Trigg, A.,Li, M.F.,Kumar, R.,Lo, G.Q.,Balasubramanian, N.,Yeo, Y.C.,Kwong, D.L. (2006). Effects of annealing and temperature on SGOI fabrication using Ge condensation. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 150-153. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2006.251018
Source Title: Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/70093
ISBN: 1424402069
DOI: 10.1109/IPFA.2006.251018
Appears in Collections:Staff Publications

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