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|Title:||Effect of In-segregation on subbands in GaInNAs/GaAs quantum wells emission around 1.3 and 1.55 micron|
|Citation:||Dixit, V., Liu, H.F., Xiang, N. (2006-09). Effect of In-segregation on subbands in GaInNAs/GaAs quantum wells emission around 1.3 and 1.55 micron. Optical and Quantum Electronics 38 (12-14) : 963-972. ScholarBank@NUS Repository. https://doi.org/10.1007/s11082-006-9042-8|
|Abstract:||The effect of In-segregation on optical properties in 7.5-nm GaInNAs/GaAs single quantum well (QW) is studied theoretically. The nominal (In, N) contents in the QW are chosen to be (0.35, 0.015) and (0.39, 0.03) for the emission wavelengths around 1.3 and 1.55 μm, respectively. Muraki's model is used to model the composition profiles in the QWs. In-plane strain, confinement potential, and subband energy levels of the QW are calculated using multi-band effective mass theory. We show a space-indirect transition between light holes localized in indium deficient region and electrons localized in indium rich region of the quantum well. Our results show that the optical transition energies are approximately constant for the segregation efficiencies smaller than 0.7 in both QWs. © Springer Science+Business Media B.V. 2007.|
|Source Title:||Optical and Quantum Electronics|
|Appears in Collections:||Staff Publications|
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