Please use this identifier to cite or link to this item: https://doi.org/10.1109/IRPS.2010.5488819
Title: Determination of the local electric field strength by energy dispersive Photon Emission Microscopy
Authors: Geinzer, T.
Heiderhoff, R.
Phang, J.C.H. 
Balk, L.J.
Issue Date: 2010
Source: Geinzer, T., Heiderhoff, R., Phang, J.C.H., Balk, L.J. (2010). Determination of the local electric field strength by energy dispersive Photon Emission Microscopy. IEEE International Reliability Physics Symposium Proceedings : 271-276. ScholarBank@NUS Repository. https://doi.org/10.1109/IRPS.2010.5488819
Abstract: Energy-dispersive Photon Emission Microscopy (PEM) allows the local electron temperature distribution to be characterized with high accuracy and sensitivity. The suitability and potential of this new technique for failure analysis and reliability investigation of semiconductor devices are demonstrated by the spatially resolved analysis of non-uniform breakdowns. With state-of-the-art devices in nanometer dimensions the charge carrier transport is analyzed in order to determine the electric field strength distribution. © 2010 IEEE.
Source Title: IEEE International Reliability Physics Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/69897
ISBN: 9781424454310
ISSN: 15417026
DOI: 10.1109/IRPS.2010.5488819
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