Correlation of flash memory defects detected with passive and active localization techniques

Abstract

The correlation of flash memory defects detected with passive and active localization techniques is discussed. There are three types of defects such as Type 1 defects, Type 2 defects and Type 3 defects. Type 1 defects are those that are detected by both techniques while Type 2 defects are existing leakage defects which are not sensitive to thermal stimulation and can only be detected with photon emission microscopy (PEM). Type 3 defects are reliability defects that are sensitive to thermal stimulation and are only detectable with laser induced techniques. The results show that a combination of PEM and laser induced techniques can distinguish existing leakage and temperature sensitive defects.