Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/69753
Title: Correlation of flash memory defects detected with passive and active localization techniques
Authors: Quah, A.C.T.
Phang, J.C.H. 
Li, S.
Massoodi, M.
Yuan, C.
Koh, L.S.
Chan, K.H.
Chua, C.M.
Issue Date: 2004
Source: Quah, A.C.T.,Phang, J.C.H.,Li, S.,Massoodi, M.,Yuan, C.,Koh, L.S.,Chan, K.H.,Chua, C.M. (2004). Correlation of flash memory defects detected with passive and active localization techniques. Proceedings of the 30th International Symposium for Testing and Failure Analysis, ISTFA 2004 : 604-608. ScholarBank@NUS Repository.
Abstract: The correlation of flash memory defects detected with passive and active localization techniques is discussed. There are three types of defects such as Type 1 defects, Type 2 defects and Type 3 defects. Type 1 defects are those that are detected by both techniques while Type 2 defects are existing leakage defects which are not sensitive to thermal stimulation and can only be detected with photon emission microscopy (PEM). Type 3 defects are reliability defects that are sensitive to thermal stimulation and are only detectable with laser induced techniques. The results show that a combination of PEM and laser induced techniques can distinguish existing leakage and temperature sensitive defects.
Source Title: Proceedings of the 30th International Symposium for Testing and Failure Analysis, ISTFA 2004
URI: http://scholarbank.nus.edu.sg/handle/10635/69753
ISBN: 0871708078
Appears in Collections:Staff Publications

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